Surface Treatment Technology
CupraEtch DE – Differential Etch for SAP/MSAP
Electronics
Sulfuric Acid / Peroxide CupraEtch DE
The Process
▪ Ferric sulfate etch based with organic
additives for etch stabilization
▪ Stable single step low-temperature process
▪ Removal of copper seed layer within SAP
or MSAP technology
▪ Operation in combination with recovery unit
Technical Benefits
▪ Clean, controlled and reliable removal of
copper seed layer CpK ≥ 1.3 or 4σ
▪ Controlled etch rate ± 10%; stable etch factor
Economical Benefits
▪ Solution regeneration and copper recovery
≥ 90%
Environmental Benefit
▪ Reduction of waste water ≥ 90%
CupraEtch DE
Process
CupraEtch DE
30 – 40 °C / 30 – 60 s
After CupraEtch DE
Clean seed layer remo-
val with no undercut
Before CupraEtch DE
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