SMT007 Magazine

SMT-Jun2017

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40 SMT Magazine • June 2017 References 1. R. Rowland, "What is Quality?" SMT maga- zine, December, 2001. 2. Gaosen Li, An Qi Zhao, Andrew Ho, Wei Wen, Zhen (Jane) Feng Ph. D., Murad Kurwa, Haolee Yang, and Liang Chen, "How to Implement Good Test Coverage and Eliminate Escapes for Printed Circuits Board Assembly Operation," SMTAI 2010. 3. An Qi Zhao, King Zhang, Wei Bing Qian, Wilson Ye, Andrew Ho, Zhen (Jane) Feng, Ph. D, Murad Kurwa, "How to Improve AOI Application in SMT Production Line," IPC APEX EXPO 2011. 4. Brent Fischthal, and Mike Cieslinski, "Be - yond 0402M Placement: Process Considerations for 03015M Microchip Mounting," IPC APEX EXPO 2014. 5. David Geiger, "Process for Package 03015," IPC APEX EXPO 2017. 6. Robert Alexander Gray, "Development of a Robust 03015 Process," IPC APEX EXPO 2015. 7. Christian Biederman, Zhen (Jane) Feng, Ph. D., Robert Pennings, Georgie Thein, David Geiger, Dennis Willie, Anwar Mohammed, Murad Kurwa, "Solder Paste Inspection with Component M3015 Pads," SMTAI 2015. Acknowledgements The authors would like to thank the compa- ny Advanced Engineering Group Lab, and test engineering and production teams of the com- pany's Milpitas site, and our AOI system ven- dors (AOI1, AOI2, AOI3, AOI4, AOI5, and AOI 6) for their strong support for this project. Spe- cial thanks also go to Barbara Koczera, Ben Lich- twardt, Zi-yang Seow, Yew Sze Pei, Daniel Hung, Steve Marks, Allen Phan, Marvin Larin, Satoshi Otake, Alejandro Mariscal-Magana, Ed Moll, Ji- yang Zhang, Golden Xu, Wei Bing Qian, Fuqing Li, and Jacky Yao, for their contributions during this project journey. Editor's Note: This paper was first published in the 2017 IPC APEX EXPO Technical Conference. David Geiger, Zhen (Jane) Feng, Ph. D., Alan Chau, Vincent Nguyen, Hung Le, Stephen Chen, Robert Pennings, Christian Biederman, Weifeng Liu, Ph. D., William Uy, Anwar Mohammed, and Mike Doiron, Flex International. AOI CAPABILITIES STUDY WITH 03015 COMPONENTS IBM scientists have achieved an im- portant milestone toward creating so- phisticated quantum devices that could become a key component of quantum computers. In their paper "Ballistic one-dimen- sional InAs nanowire cross-junction in- terconnects" (as detailed in the peer- review journal Nano Letters), IBM sci- entists in Zurich have shot an electron through a III-V semiconductor nanowire integrated on silicon for the first time. Using their recently developed Template-Assisted- Selective-Epitaxy (TASE) technique to build ballistic cross-directional quantum communication links, they pioneered devices which can coherently link multi- ple functional nanowires for the reliable transfer of quantum information across nanowire networks. The nanowire acts as a perfect guide for the electrons, such that the full quantum information of the electron (energy, momentum, spin) can be transferred without losses. By solving some major technical hurdles of controlling the size, shape, position and quality of III-V semicon- ductors integrated on Si, ballistic one- dimensional quantum transport has been demonstrated. While the exper- iments are still on a very fundamental level, such nanowire devices may pave the way towards fault-tolerant, scalable electronic quantum computing in the future. The paper's lead author, IBM scientist Dr. Jo- hannes Gooth, noted that the milestone has impli- cations for the development of quantum computing. By enabling fully ballistic connections where particles are in flight at the nanoscale, the quantum system of- fers exponentially larger computational space. Ballistic Nanowire Connections, A Potential Future Key Component for Quantum Computing

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