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May 2015 • The PCB Design Magazine 29 over a stripline structure, causing the impedance to increase because of the lack of copper in the return path. As with any measurement system, awareness of what to expect and what not to ex- pect and having the tools to predict what ought to be happening are essential to providing reli- able and consistent results. PCBDESIGN Martyn Gaudion is CeO of Polar Instruments. To contact him, click here. Figure 3: Incident impedance measurement by lPe method. (For more detail, see my February 2015 column, I3: Incident, Instantaneous, Impedance). Classical semiconductor physics suggests that a single charge transport CMOs (complementary met- al-oxide–semiconductor) device cannot achieve ultra- high-performance and ultra-low-standby-power at the same time. nanoelectronics researchers are trying to design devices that hit the 'sweet spot', i.e. where a charge transport device can provide its highest perfor- mance at its lowest power consumption, especially in its 'off' state. now, researchers from the Integrated nanotechnology lab at King abdullah university of science and Technology (KausT) show a unique device concept which combines the advantages of a tun- nel field-effect transistor (TFeT) for ultra- low OFF (leakage) current and ultra-steep sub-thresh- old slope for sharper and faster On and OFF switching due to the FeT's nanotube architecture. In addition, this nanotube device, which is built on heterogeneous material systems, shows scalability and area efficiency in an unprecedented way. according to the scientists, this is the highest comprehensive func- tionality achieved ever in single device. "We capitalized on an innovative design of nano- tube architecture with a core (inner) gate and a shell (outer) gate," Muhammad Mustafa hussain, an associ- ate Professor of electrical engineering at KausT, tells nanowerk. "This way we were able to achieve utmost electrostatic control for ultra-low-standby-power operation." The team reports their findings in the april 29, 2015 online edition of scientific reports ("Inas/si hetero-Junction nano- tube Tunnel Transistors"). Novel Nanotube Tunnel FET Architecture the pulse IMPEDANCE CONTROL, REVISITED continues

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