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68 PCB007 MAGAZINE I SEPTEMBER 2018 ce. Shown in Table 6 are the achievable crys- tal data of a viafill (VF) and through-hole (TH) electrolytic copper plating bath. Perfect 1,1,1 unit cells being grown to fla- wless copper grains and subsequent void-free crystallites are shown in Figure 18, a SEM of an ion-milled (FIB) copper layer being subse- quently subjected to X-ray diffraction (XRD) for the above mentioned copper crystal data aquisition. This configuration does not tend to undergo the vacancy-copper flux Kirkendall mechanism. Figure 17: Basic metal lattices. Table 6: Copper crystallography of a VF-TH copper plating bath (relative intensities in %). Figure 18: Perfect and void-free VF-TH copper crystallization.