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84 SMT007 MAGAZINE I FEBRUARY 2019 tion and tin pest that increase with decreas- ing temperature. To avoid this, store compo- nents at 14°C above the critical temperature of 13.2°C. The temperature of the components is then reduced to a minimum. SMT007 References 1. Jacobus Henricus van't Hoff. Études de dynamique chimique. Frederik Muller & Co., 1884, pp. 114–118. 2. Svante Arrhenius. Zeitschrift für Physikalische Che- mie. 1889, pp. 226–248. 3. International Union of Pure and Applied Chemistry (IUPAC). Compendium of Chemical Terminology: Gold Book. 2014. 4. Karl Müller & Karl-Helmut Tostmann. Lehrbuch der Metallkorrosion. Lehrbuchreihe Galvanotechnik, 2017, pp. 32–33. 5. M. Roggenbuck & M. Haubner. "Qualification Drying Storage Cabinets." Thales Electron Devices GmBH, 2018. 6. ZVEI Die Elektroindustrie. "Guideline for the Long- Term Storage of Components, Subassemblies and Devic- es."2014, p. 10. 7. Super Dry Totech GmbH. "Cost Comparison." 2013. Richard Heimsch is a director of Super Dry Totech. To read past columns or contact Heimsch, click here. A research study led by Suprem Das, assistant profes- sor of industrial and manufacturing systems engineer- ing at Kansas State University, in collaboration with re- searchers at Purdue University, has demonstrated micro/ nanoscale transistors made of two-dimensional atomi- cally thin materials that show high performance and low noise. The devices are less than one-hundredth of the diameter of a single human hair and could be key to innovating electronics and precision sensing. Many researchers worldwide are focusing attention on building the next generation of transis- tors from exotic atomic-scale 2D materials such as molybdenum di-selenide. These materials are promising because they show high-performance transistor ac- tion that may, in the future, replace today's silicon electronics. How- ever, very few of them are looking at yet another important aspect— the inherent electronic noise in this new class of materials, which is ubiquitous to all devices and circuits and only worsens when the material becomes atomic thin. The study conducted by Das' research team has sys- tematically shown that if one can control the layer thick- ness between 10 and 15 atomic-thin in a transistor, the device will not only show high performance—such as turning the switch on—but also experience very low electronic noise. This unique finding is es- sential to building several en- abling technologies in electron- ics and sensing using a number of emerging 2D materials. This research is a comprehensive ef- fort of a previous finding where Das' team conducted the first study on noise in MoSe2 transis- tors. A patent application has been filed by Kansas State University Research Foundation (KSURF) on this technology. The research was published at Physical Review Applied. (Source: Kansas State University) New Study on Low-noise, High-performance Transistors Could Bring Innovations in Electronics, Sensing Suprem Das

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