IPC International Community magazine an association member publication
Issue link: https://iconnect007.uberflip.com/i/1543955
100 I-CONNECT007 MAGAZINE I MARCH 2026 B E YO N D D ES I G N smartphones, robotics, autonomous vehicles, fifth-generation (5G) communications, and artificial intelligence. Plus, ReRAM technology is built on fab-friendly materials and integrates seamlessly into existing semiconductor flows. It delivers fast read/write performance and is ideal for applica- tions that demand high-temperature operation and exceptional endurance. The result is a power-effi- cient, non-volatile memory that is easy to embed, highly reliable, and inherently tolerant to radiation and electromagnetic interference. Random-access memory (RAM) can be classified R esistive RAM (ReRAM) is a nextgenera- tion nonvolatile memory technology that stores data by changing the resistance of a dielectric material layer rather than trapping elec- trical charge. That simple shift unlocks a surprising amount of power. ReRAM sits at the intersection of speed, efficiency, and scalability, exactly where the industry is hitting bottlenecks. ReRAM addresses the growing need for higher- performance, lower-power non-volatile memory solutions across a range of new electronic prod- ucts, including Internet of Things (IoT) devices, BY BA R RY O L N E Y, I N - C I RC U I T D ES I G N PT Y LT D | AU ST R A L I A ReRAM The Industry's Next Game-Changer Figure 1: While eFlash hits a scaling "dead end" at larger nodes (22–28 nm), ReRAM continues advancing to smaller geometries (16 nm and 12 nm), highlighting its path forward for next-gen- eration integration. (Source: Weebit Nano)